Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates

Journal article
(Original article)


Publication Details

Author(s): Schmaltz T, Amin AY, Khassanov A, Meyer-Friedrichsen T, Steinrück HG, Magerl A, Segura JJ, Voitchovsky K, Stellacci F, Halik M
Journal: Advanced Materials
Publisher: Wiley-VCH Verlag
Publication year: 2013
Volume: 25
Journal issue: 32
Pages range: 4511-4514
ISSN: 0935-9648
Language: English


Abstract


Self-assembled monolayer field-effect transistors (SAMFETs) of BTBT functionalized phosphonic acids are fabricated. The molecular design enables device operation with charge carrier mobilities up to 10 cm V s and for the first time SAMFETs which operate on rough, flexible PEN substrates even under mechanical substrate bending. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.



FAU Authors / FAU Editors

Yousefi Amin, Atefeh
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Halik, Marcus Prof. Dr.
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Khassanov, Artöm
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Schmaltz, Thomas
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Steinrück, Hans-Georg
Lehrstuhl für Kristallographie und Strukturphysik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions
École Polytechnique Fédérale de Lausanne (EPFL)
Heraeus Precious Metals GmbH & Co. KG


How to cite

APA:
Schmaltz, T., Amin, A.Y., Khassanov, A., Meyer-Friedrichsen, T., Steinrück, H.-G., Magerl, A.,... Halik, M. (2013). Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates. Advanced Materials, 25(32), 4511-4514. https://dx.doi.org/10.1002/adma.201301176

MLA:
Schmaltz, Thomas, et al. "Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates." Advanced Materials 25.32 (2013): 4511-4514.

BibTeX: 

Last updated on 2018-08-08 at 21:43