Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates

Schmaltz T, Amin AY, Khassanov A, Meyer-Friedrichsen T, Steinrück HG, Magerl A, Segura JJ, Voitchovsky K, Stellacci F, Halik M (2013)


Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2013

Journal

Original Authors: Schmaltz T., Amin A.Y., Khassanov A., Meyer-Friedrichsen T., Steinruck H.-G., Magerl A., Segura J.J., Voitchovsky K., Stellacci F., Halik M.

Publisher: Wiley-VCH Verlag

Book Volume: 25

Pages Range: 4511-4514

Journal Issue: 32

URI: http://onlinelibrary.wiley.com/doi/10.1002/adma.201301176/abstract

DOI: 10.1002/adma.201301176

Abstract

Self-assembled monolayer field-effect transistors (SAMFETs) of BTBT functionalized phosphonic acids are fabricated. The molecular design enables device operation with charge carrier mobilities up to 10 cm V s and for the first time SAMFETs which operate on rough, flexible PEN substrates even under mechanical substrate bending. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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APA:

Schmaltz, T., Amin, A.Y., Khassanov, A., Meyer-Friedrichsen, T., Steinrück, H.-G., Magerl, A.,... Halik, M. (2013). Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates. Advanced Materials, 25(32), 4511-4514. https://dx.doi.org/10.1002/adma.201301176

MLA:

Schmaltz, Thomas, et al. "Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates." Advanced Materials 25.32 (2013): 4511-4514.

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