Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

Journal article

Publication Details

Author(s): Weiße J, Hauck M, Sledziewski T, Tschiesche M, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T
Title edited volumes: Materials Science Forum
Journal: Materials Science Forum
Publication year: 2018
Volume: 924
Pages range: 184-187
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


In this work, we analyze compensating defects which are formed after
implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and
subsequent thermal annealing. These defects reduce the expected free
charge carrier density by 84% for a low doped layer with [Al]impl ≈ 9ž·1016 cm-3 and by 27 % for a high doped layer with [Al]impl ≈ 2·ž1019 cm-3.
Furthermore, an electrical activation ratio of implanted aluminum ions
of 100 % is calculated. The ionization energy of implanted aluminum as
measured by Hall effect and admittance spectroscopy ranges from 101 meV
to 305 meV depending on the doping concentration.

FAU Authors / FAU Editors

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Hauck, Martin
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Lehrstuhl für Angewandte Physik
Tschiesche, Mattias
Lehrstuhl für Angewandte Physik
Weiße, Julietta
Lehrstuhl für Elektronische Bauelemente

External institutions with authors

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

How to cite

Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. Materials Science Forum, 924, 184-187.

Weiße, Julietta, et al. "Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices." Materials Science Forum 924 (2018): 184-187.


Last updated on 2019-18-07 at 14:38