Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Kumar A, Heilmann M, Latzel M, Kapoor R, Sharma I, Göbelt M, Christiansen SH, Kumar V, Singh R (2016)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

Publisher: Nature Publishing Group

Book Volume: 6

Article Number: 27553

DOI: 10.1038/srep27553

Open Access Link: http://www.nature.com/articles/srep27553

Abstract

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.

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How to cite

APA:

Kumar, A., Heilmann, M., Latzel, M., Kapoor, R., Sharma, I., Göbelt, M.,... Singh, R. (2016). Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes. Scientific Reports, 6. https://dx.doi.org/10.1038/srep27553

MLA:

Kumar, Ashutosh, et al. "Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes." Scientific Reports 6 (2016).

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