Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

Journal article


Publication Details

Author(s): Kanasaki J, Tanimura H, Tanimura K, Ries P, Heckel W, Biedermann K, Fauster T
Journal: Physical Review B - Condensed Matter and Materials Physics
Publication year: 2018
Volume: 97
Pages range: 035201
ISSN: 1550-235X
Language: English


FAU Authors / FAU Editors

Biedermann, Kerstin
Lehrstuhl für Festkörperphysik
Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik


External institutions with authors

Osaka University


How to cite

APA:
Kanasaki, J., Tanimura, H., Tanimura, K., Ries, P., Heckel, W., Biedermann, K., & Fauster, T. (2018). Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions. Physical Review B - Condensed Matter and Materials Physics, 97, 035201. https://dx.doi.org/10.1103/PhysRevB.97.035201

MLA:
Kanasaki, Junichi, et al. "Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions." Physical Review B - Condensed Matter and Materials Physics 97 (2018): 035201.

BibTeX: 

Last updated on 2019-02-01 at 23:10