Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Journal article
(Letter)


Publication Details

Author(s): Sledziewski T, Vivona M, Alassaad K, Kwasnicki P, Arvinte R, Beljakowa S, Weber HB, Giannazzo F, Peyre H, Souliere V, Chassagne T, Zielinski M, Juillaguet S, Ferro G, Roccaforte F, Krieger M
Journal: Journal of Applied Physics
Publisher: AMER INST PHYSICS
Publication year: 2016
Volume: 120
Journal issue: 20
ISSN: 0021-8979


Abstract


The effect of germanium (Ge) on n-type 4H-SiC is experimentally studied by electrical characterization of homoepitaxial layers grown by chemical vapor deposition (CVD). Measurements show that electrical properties of epitaxial layers can be changed by intentional incorporation of germane (GeH4) gas during the deposition process. On the nanoscale, two-dimensional mappings acquired with conductive atomic force microscopy show preferential conductive paths on the surface of Ge-doped samples, which are related to the presence of this isoelectronic impurity. Hall effect measurements confirm that also macroscopic electrical properties of n-type 4H-SiC are improved due to incorporation of Ge into SiC during CVD growth. In particular, despite equal free electron concentration, enhanced mobility in a wide temperature range is measured in Ge-doped samples as compared to a pure 4H-SiC layer. Based on our results from Hall effect measurements as well as admittance spectroscopy and deep level transient spectroscopy, it is speculated that Ge influences the generation and annealing of other point defects and thus helps to reduce the total concentration of defects. Published by AIP Publishing.



FAU Authors / FAU Editors

Beljakowa, Svetlana Dr.
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Sledziewski, Tomasz
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Sledziewski, T., Vivona, M., Alassaad, K., Kwasnicki, P., Arvinte, R., Beljakowa, S.,... Krieger, M. (2016). Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition. Journal of Applied Physics, 120(20). https://dx.doi.org/10.1063/1.4967301

MLA:
Sledziewski, Tomasz, et al. "Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition." Journal of Applied Physics 120.20 (2016).

BibTeX: 

Last updated on 2018-19-04 at 03:44