Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

Journal article
(Review article)


Publication Details

Author(s): Wellmann P
Journal: Zeitschrift fur Anorganische und Allgemeine Chemie
Publisher: Wiley-VCH Verlag
Publication year: 2017
Volume: 643
Journal issue: 21
Pages range: 1312-1322
ISSN: 1521-3749


Abstract


Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.


FAU Authors / FAU Editors

Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Wellmann, P. (2017). Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond. Zeitschrift fur Anorganische und Allgemeine Chemie, 643(21), 1312-1322. https://dx.doi.org/10.1002/zaac.201700270

MLA:
Wellmann, Peter. "Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond." Zeitschrift fur Anorganische und Allgemeine Chemie 643.21 (2017): 1312-1322.

BibTeX: 

Last updated on 2018-20-12 at 13:51