Growth, defects and doping of 3C-SiC on hexagonal polytypes
Yakimova R, Ivanov IG, Vines L, Linnarsson MK, Gällström A, Giannazzo F, Roccaforte F, Wellmann P, Syväjärvi M, Jokubavicius V (2017)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2017
Journal
Publisher: Electrochemical Society Inc.
Book Volume: 6
Pages Range: P741-P745
Journal Issue: 10
DOI: 10.1149/2.0281710jss
Abstract
Technologies for the growth of 3C-SiC with crystalline quality and crystal size similar to hexagonal counterparts (6H- or 4H-SiC) are still at the laboratory stage. There are several challenges in the control of polytype stability and formation of structural defects which have to be eliminated to reveal the full potential of this material. Nevertheless, 3C-SiC has been explored for various energy, environment and biomedical applications which significantly benefit from the intrinsic semiconductor properties of this material. The future of 3C-SiC and its applications depends on the advances which will be made in improving crystalline quality, enlarging crystal size and controlling doping levels which have not been entirely explored due to the lack of high quality 3C-SiC substrates. This paper reviews recent progress in growth and doping of thick 3C-SiC layers on hexagonal SiC substrates using sublimation epitaxy. It covers the growth process on off-axis substrates and defects occurrence, as well as the issue of obtaining high resistivity material.
Authors with CRIS profile
Involved external institutions
Linköping University
Sweden (SE)
CNR Institute for Microelectronics and Microsystems (CNR-IMM)
Italy (IT)
Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH)
Sweden (SE)
University of Oslo
Norway (NO)
Sweden (SE)
CNR Institute for Microelectronics and Microsystems (CNR-IMM)
Italy (IT)
Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH)
Sweden (SE)
University of Oslo
Norway (NO)
How to cite
APA:
Yakimova, R., Ivanov, I.G., Vines, L., Linnarsson, M.K., Gällström, A., Giannazzo, F.,... Jokubavicius, V. (2017). Growth, defects and doping of 3C-SiC on hexagonal polytypes. ECS Journal of Solid State Science and Technology, 6(10), P741-P745. https://dx.doi.org/10.1149/2.0281710jss
MLA:
Yakimova, Rositsa, et al. "Growth, defects and doping of 3C-SiC on hexagonal polytypes." ECS Journal of Solid State Science and Technology 6.10 (2017): P741-P745.
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