Structural Defect Studies of Semiconductor Crystals with Laue Topography

Conference contribution
(Conference Contribution)


Publication Details

Author(s): Gröschel A, Will J, Bergmann C, Grillenberger H, Eichler S, Scheffer-Czygan M, Magerl A
Publication year: 2011
Volume: 178-179
Pages range: 360-+
ISSN: 1012-0394
eISSN: 1662-9779


Abstract


A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a mu PCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140 degrees C and the in-situ capability of the setup is demonstrated.



FAU Authors / FAU Editors

Bergmann, Christoph
Lehrstuhl für Kristallographie und Strukturphysik
Grillenberger, Hannes
Graduiertenzentrum der FAU
Gröschel, Alexander
Lehrstuhl für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


How to cite

APA:
Gröschel, A., Will, J., Bergmann, C., Grillenberger, H., Eichler, S., Scheffer-Czygan, M., & Magerl, A. (2011). Structural Defect Studies of Semiconductor Crystals with Laue Topography. (pp. 360-+).

MLA:
Gröschel, Alexander, et al. "Structural Defect Studies of Semiconductor Crystals with Laue Topography." 2011. 360-+.

BibTeX: 

Last updated on 2018-31-07 at 01:23