Structural Defect Studies of Semiconductor Crystals with Laue Topography

Gröschel A, Will J, Bergmann C, Grillenberger H, Eichler S, Scheffer-Czygan M, Magerl A (2011)


Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2011

Journal

Book Volume: 178-179

Pages Range: 360-+

DOI: 10.4028/www.scientific.net/SSP.178-179.360

Abstract

A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a mu PCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140 degrees C and the in-situ capability of the setup is demonstrated.

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How to cite

APA:

Gröschel, A., Will, J., Bergmann, C., Grillenberger, H., Eichler, S., Scheffer-Czygan, M., & Magerl, A. (2011). Structural Defect Studies of Semiconductor Crystals with Laue Topography. (pp. 360-+).

MLA:

Gröschel, Alexander, et al. "Structural Defect Studies of Semiconductor Crystals with Laue Topography." 2011. 360-+.

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