Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids

Gothe B, de Roo T, Will J, Unruh T, Mecking S, Halik M (2017)


Publication Type: Journal article

Publication year: 2017

Journal

Book Volume: 9

Pages Range: 18584-18589

Journal Issue: 47

DOI: 10.1039/c7nr06090d

Abstract

The use of functional oligomers of pi-conjugated oligofluorenes led to a region-selective assembly of amorphous monolayers which exhibit robust lateral charge transport pathways in self-assembled monolayer field-effect transistors over long distances and even in mixed monolayers of semiconducting and insulating molecules. This oligomer concept might stimulate a new molecular design of self-assembling semiconducting materials.

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How to cite

APA:

Gothe, B., de Roo, T., Will, J., Unruh, T., Mecking, S., & Halik, M. (2017). Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids. Nanoscale, 9(47), 18584-18589. https://dx.doi.org/10.1039/c7nr06090d

MLA:

Gothe, Bastian, et al. "Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids." Nanoscale 9.47 (2017): 18584-18589.

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