Semiconductor device optimization in the presence of thermal effects

Drago C, Marheineke N, Pinnau R (2013)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2013

Journal

ZAMM - Zeitschrift für angewandte Mathematik und Mechanik Wiley-VCH Verlag

Publisher: Wiley-VCH Verlag

Book Volume: 93

Pages Range: 700-705

Journal Issue: 9

DOI: 10.1002/zamm.201100171

Abstract

Optimal design problems for semiconductor devices with relevant thermal effects can be formulated by help of the energy transport model. In this paper we perform a sensitivity analysis to derive the first-order necessary condition for the optimization. Exploiting the special structure of the KKT system we use a special variant of the classical Gummel iteration to provide a very fast optimization algorithm. Numerical results for a ballistic diode underline the feasibility of our approach. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Authors with CRIS profile

Nicole Marheineke Professur für Wissenschaftliches Rechnen

Involved external institutions

Technische Universität Kaiserslautern DE Germany (DE) Università degli Studi di Catania IT Italy (IT)

How to cite

APA:

Drago, C., Marheineke, N., & Pinnau, R. (2013). Semiconductor device optimization in the presence of thermal effects. ZAMM - Zeitschrift für angewandte Mathematik und Mechanik, 93(9), 700-705. https://dx.doi.org/10.1002/zamm.201100171

MLA:

Drago, C.R., Nicole Marheineke, and René Pinnau. "Semiconductor device optimization in the presence of thermal effects." ZAMM - Zeitschrift für angewandte Mathematik und Mechanik 93.9 (2013): 700-705.

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