Simulation of Industrial Crystal Growth by the Vertical Bridgman Method
Boschert S, Schmidt A, Siebert KG, Bänsch E, Benz KW, Dziuk G, Kaiser T (2003)
Publication Type: Book chapter / Article in edited volumes
Publication year: 2003
Publisher: Springer
Edited Volumes: Mathematics - Key Technology for the Future
City/Town: Berlin
Pages Range: 331-342
ISBN: 3-540-44220-0
DOI: 10.1007/978-3-642-55753-8_26
Abstract
Single crystals of Cadmium-Zinc-Telluride are used as a substrate material for the production of infrared detectors and are usually grown by the vertical Bridgman method. We present a simulation of the whole growth process in two steps: In the first step, the (stationary) heat transport in the furnace is modeled and calculated for different positions of the ampoule. This provides information about the most important parameter during this process: the temperature distribution in furnace and ampoule. The obtained temperatures are then used in the second step as boundary conditions for the (time dependent) simulation of temperature and convection in the ampoule. Only the use of adaptive finite element methods allows an efficient numerical simulation of the moving phase boundary, the convection in the melt and the temperature distribution in melt and crystal. Numerical results are presented for both furnace and ampoule simulations.
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APA:
Boschert, S., Schmidt, A., Siebert, K.G., Bänsch, E., Benz, K.-W., Dziuk, G., & Kaiser, T. (2003). Simulation of Industrial Crystal Growth by the Vertical Bridgman Method. In Willi Jäger, Hans-Joachim Krebs (Eds.), Mathematics - Key Technology for the Future. (pp. 331-342). Berlin: Springer.
MLA:
Boschert, Stefan, et al. "Simulation of Industrial Crystal Growth by the Vertical Bridgman Method." Mathematics - Key Technology for the Future. Ed. Willi Jäger, Hans-Joachim Krebs, Berlin: Springer, 2003. 331-342.
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