Photoluminescence topography of fluorescent SiC and its corresponding source crystals
Wilhelm M, Kaiser M, Jokubavicius V, Syväjärvi M, Ou Y, Ou H, Wellmann P (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 740-742
Pages Range: 421-424
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
Event location: St. Petersburg
DOI: 10.4028/www.scientific.net/MSF.740-742.421
Abstract
The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.
Authors with CRIS profile
Martin Wilhelm
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Michl Kaiser
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)
Denmark (DK)
Linköping University
Sweden (SE)
Denmark (DK)
Linköping University
Sweden (SE)
How to cite
APA:
Wilhelm, M., Kaiser, M., Jokubavicius, V., Syväjärvi, M., Ou, Y., Ou, H., & Wellmann, P. (2013). Photoluminescence topography of fluorescent SiC and its corresponding source crystals. Materials Science Forum, 740-742, 421-424. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.421
MLA:
Wilhelm, Martin, et al. "Photoluminescence topography of fluorescent SiC and its corresponding source crystals." Materials Science Forum 740-742 (2013): 421-424.
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