3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers

Journal article
(Original article)


Publication Details

Author(s): Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P
Editor(s): Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis
Journal: Materials Science Forum
Publisher: Trans Tech Publications Ltd
Publication year: 2017
Volume: 897
Conference Proceedings Title: Materials Science Forum, Silicon Carbide and Related Materials 2016, Volume 897
Pages range: 15-18
ISBN: 9783035710434
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.


FAU Authors / FAU Editors

Schuh, Philipp
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Consiglio Nazionale delle Ricerche (CNR)
E.T.C. (LPE Spa - Epitaxial Technology Center)
National Institute for Nuclear Physics / Istituto Nazionale di Fisica Nucleare (INFN)


How to cite

APA:
Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.15

MLA:
Schuh, Philipp, et al. "3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers." Materials Science Forum 897 (2017): 15-18.

BibTeX: 

Last updated on 2018-06-11 at 20:50