3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers

Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P (2017)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2017

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 897

Pages Range: 15-18

Conference Proceedings Title: Materials Science Forum, Silicon Carbide and Related Materials 2016, Volume 897

Event location: Halkidiki GR

ISBN: 9783035710434

DOI: 10.4028/www.scientific.net/MSF.897.15

Abstract

We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.

Authors with CRIS profile

Philipp Schuh Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

E.T.C. (LPE Spa - Epitaxial Technology Center) IT Italy (IT) National Institute for Nuclear Physics / Istituto Nazionale di Fisica Nucleare (INFN) IT Italy (IT) Consiglio Nazionale delle Ricerche (CNR) / National Research Council of Italy IT Italy (IT)

How to cite

APA:

Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.15

MLA:

Schuh, Philipp, et al. "3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers." Materials Science Forum 897 (2017): 15-18.

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