Mahajeri M, Voigt M, Klupp Taylor R, Reindl A, Peukert W (2010)
Publication Language: English
Publication Type: Journal article
Publication year: 2010
Book Volume: 518
Pages Range: 3373-3381
Journal Issue: 12
DOI: 10.1016/j.tsf.2009.10.119
The structure formation and charge transfer of thin nanoparticulate indium tin oxide (ITO) films prepared by dip-coating was studied as a function of stabilizer before and after annealing at different temperatures. The analysis of the film structure by optical methods revealed that it is a function of the stability. Suspensions containing an optimum stabilizer concentration of 0.1 mol/l resulted in densely packed films with a peak specific conductivity of 8.3 S cm− 1 after annealing at 550 °C for 1 h in air and 121 S cm− 1 after annealing in forming gas at 250 °C for 1 h, respectively. Furthermore, for the densely packed films fluctuation-induced tunnelling was found to be the dominant charge transport mechanism, whereas for the low density films a thermally activated charge transport was observed. That the films of maximum density showed a metallic charge transport behaviour at temperatures above 300 K indicated the optimal contact between ITO particles had been achieved.
APA:
Mahajeri, M., Voigt, M., Klupp Taylor, R., Reindl, A., & Peukert, W. (2010). Evaluation of the film formation and the charge transport mechanism of indium tin oxide nanoparticle films. Thin Solid Films, 518(12), 3373-3381. https://doi.org/10.1016/j.tsf.2009.10.119
MLA:
Mahajeri, Mahdi, et al. "Evaluation of the film formation and the charge transport mechanism of indium tin oxide nanoparticle films." Thin Solid Films 518.12 (2010): 3373-3381.
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