Doping of 4H-SiC with group IV elements

Krieger M, Rühl M, Sledziewski T, Ellrott G, Palm T, Weber HB, Bockstedte MG (2016)

Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2016

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

Book Volume: 858

Pages Range: 301

DOI: 10.4028/www.scientific.net/MSF.858.301

Authors with CRIS profile

Michael Krieger Chair of Applied Physics Tomasz Sledziewski Chair of Applied Physics Günter Ellrott Chair of Applied Physics Theresa Palm Chair of Applied Physics Heiko Weber Chair of Applied Physics Michel Georg Bockstedte Naturwissenschaftliche Fakultät

How to cite

APA:

Krieger, M., Rühl, M., Sledziewski, T., Ellrott, G., Palm, T., Weber, H.B., & Bockstedte, M.G. (2016). Doping of 4H-SiC with group IV elements. Materials Science Forum, 858, 301. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.301

MLA:

Krieger, Michael, et al. "Doping of 4H-SiC with group IV elements." Materials Science Forum 858 (2016): 301.

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