Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces

Journal article
(Letter)


Publication Details

Author(s): Sledziewski T, Weber HB, Krieger M
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2016
Volume: 858
Pages range: 697-700
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


FAU Authors / FAU Editors

Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Sledziewski, Tomasz
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Sledziewski, T., Weber, H.B., & Krieger, M. (2016). Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces. Materials Science Forum, 858, 697-700. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.697

MLA:
Sledziewski, Tomasz, Heiko B. Weber, and Michael Krieger. "Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces." Materials Science Forum 858 (2016): 697-700.

BibTeX: 

Last updated on 2018-19-04 at 03:30