Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals

Journal article
(Original article)


Publication Details

Author(s): Bickermann M, Weingärtner R, Herro ZG, Hofmann HD, Künecke U, Wellmann P, Winnacker A
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publishing place: Switzerland
Publication year: 2003
Volume: 433-436
Conference Proceedings Title: Materials Science Forum (Volumes 433-436)
Pages range: 337-340
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


Electrical and optical characterization was performed to obtain information about the doping and compensation levels of samples cut from boron doped, physical vapor transport (PVT) grown 6H-SiC crystals. Values for N-A and N-D can be derived from analysis on temperature dependent Hall effect measurement data. The charge carrier concentration p at room temperature depends approximately linearly on N-A/N-D. The below band-gap absorption (BBGA) maximum at about 730 nm is correlated mainly to N-A, and, for constant N-A, is slightly anti-correlated to N-D. The same results can be obtained from an rootalpha vs. E plot extrapolated to alpha = 0 in the near band-gap region, as the broad absorption band induces a shift in the optically detected band-gap towards lower energies. Absorption measurements can give an estimation of N-A-N-D in boron doped SiC samples, and from wafers cut from the same crystal, the concentration of boron and compensating impurities can be evaluated.


FAU Authors / FAU Editors

Bickermann, Matthias PD Dr.
Technische Fakultät
Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät


How to cite

APA:
Bickermann, M., Weingärtner, R., Herro, Z.G., Hofmann, H.-D., Künecke, U., Wellmann, P., & Winnacker, A. (2003). Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals. Materials Science Forum, 433-436, 337-340. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.337

MLA:
Bickermann, Matthias, et al. "Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals." Materials Science Forum 433-436 (2003): 337-340.

BibTeX: 

Last updated on 2018-18-09 at 13:38