Structural defects in SiC crystals investigated by high energy x-ray diffraction

Journal article
(Original article)


Publication Details

Author(s): Weißer M, Seitz C, Wellmann P, Hock R, Magerl A
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publishing place: Switzerland
Publication year: 2004
Volume: 457-460
Conference Proceedings Title: Materials Science Forum (Volumes 457-460)
Pages range: 339-342
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


High energy x-ray diffraction (up to 300 keV) has been used to analyse structural defects in an as grown SiC boule with a diameter of 55 nun, a thickness of 20 mm and in a 2 inch wafer. The crystals are 6H SiC grown by PVT method. In the wafer numerous grains can be identified and localised with a mosaicity in the order of 0.05degrees, whereas the whole wafer shows a mosaic spread of around 0.1degrees. The bulk crystal shows a pronounced domain structure and a bending in the lattice plane orientation. The local reflection broadening is between 0.2degrees and 2degrees, while the tilts of the lattice planes over the entire wafer are between 2 and 6degrees (2theta-values).


FAU Authors / FAU Editors

Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Weißer, Matthias Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Weißer, M., Seitz, C., Wellmann, P., Hock, R., & Magerl, A. (2004). Structural defects in SiC crystals investigated by high energy x-ray diffraction. Materials Science Forum, 457-460, 339-342. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.339

MLA:
Weißer, Matthias, et al. "Structural defects in SiC crystals investigated by high energy x-ray diffraction." Materials Science Forum 457-460 (2004): 339-342.

BibTeX: 

Last updated on 2018-23-11 at 06:05