Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Wellmann P, Albrecht A, Künecke U, Birkmann B, Müller G, Jurisch M
Zeitschrift: European Physical Journal-Applied Physics
Verlag: EDP Sciences
Jahr der Veröffentlichung: 2004
Band: 27
Heftnummer: 1-3
Seitenbereich: 357-361
ISSN: 1286-0042
Sprache: Englisch


Abstract


We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots were determined in the charge carrier concentration range of 3x10(17) m(-3)...1x10(18) cm(-3) (range of trust up to 3x10(18) cm(-3)) which is technically relevant for applications of GaAs wafers as substrate for laser and light emitting diodes. The error of the optical technique is in the range of 10%... 15% and is comparable to electrical Hall measurements. The sensitivity of the setup, i.e. smallest detectable variation of doping (and hence charge carrier) concentration, is less than 1% in an area of 5x5 mm(2) and about 20% across the 3 inch area. Absorption mappings of the charge carrier and hence doping homogeneity are presented for n-type GaAs:Si and GaAs:Te.



FAU-Autoren / FAU-Herausgeber

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Müller, Georg Prof. Dr.
Technische Fakultät
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Autor(en) der externen Einrichtung(en)
Freiberger Compound Materials GmbH


Zitierweisen

APA:
Wellmann, P., Albrecht, A., Künecke, U., Birkmann, B., Müller, G., & Jurisch, M. (2004). Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping. European Physical Journal-Applied Physics, 27(1-3), 357-361. https://dx.doi.org/10.1051/epjap:2004041

MLA:
Wellmann, Peter, et al. "Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping." European Physical Journal-Applied Physics 27.1-3 (2004): 357-361.

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