Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping

Wellmann P, Albrecht A, Künecke U, Birkmann B, Müller G, Jurisch M (2004)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2004

Journal

European Physical Journal-Applied Physics EDP Sciences

Publisher: EDP Sciences

Book Volume: 27

Pages Range: 357-361

Journal Issue: 1-3

DOI: 10.1051/epjap:2004041

Abstract

We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots were determined in the charge carrier concentration range of 3x10(17) m(-3)...1x10(18) cm(-3) (range of trust up to 3x10(18) cm(-3)) which is technically relevant for applications of GaAs wafers as substrate for laser and light emitting diodes. The error of the optical technique is in the range of 10%... 15% and is comparable to electrical Hall measurements. The sensitivity of the setup, i.e. smallest detectable variation of doping (and hence charge carrier) concentration, is less than 1% in an area of 5x5 mm(2) and about 20% across the 3 inch area. Absorption mappings of the charge carrier and hence doping homogeneity are presented for n-type GaAs:Si and GaAs:Te.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Ulrike Künecke Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Georg Müller Technische Fakultät

Involved external institutions

Freiberger Compound Materials GmbH DE Germany (DE)

How to cite

APA:

Wellmann, P., Albrecht, A., Künecke, U., Birkmann, B., Müller, G., & Jurisch, M. (2004). Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping. European Physical Journal-Applied Physics, 27(1-3), 357-361. https://dx.doi.org/10.1051/epjap:2004041

MLA:

Wellmann, Peter, et al. "Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping." European Physical Journal-Applied Physics 27.1-3 (2004): 357-361.

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