Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

Journal article
(Original article)

Publication Details

Author(s): Hens P, Künecke U, Konias K, Hock R, Wellmann P
Journal: Materials Science Forum
Publication year: 2009
Volume: 615-617
Conference Proceedings Title: Materials Science Forum (Volumes 615-617)
Pages range: 11-14
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Silicon carbide as a material for electronic devices still has Substantial problems concerning its structural quality and defects. It has been shown that dopants call have a big influence on structural properties like poly-type stability and dislocation statistics [1]. We will discuss the effect of an isoelectronic dopant in silicon carbide. Germanium, being a member of the 4(th) group in the periodic table of elements like silicon and carbon, will not influence the electrical properties of the material such as e.g. aluminum. In Our experiments we reached concentrations of up to 1*10(20) cm(-3). We have observed all impact on the polytype stability during sublimation growth with in-situ germanium incorporation. We investigated all influence on the dislocation statistics during growth and, hence, varying germanium concentration. We found only a slight decrease in mobility during Hall measurements but no severe changes in electrical properties of the material.

FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Konias, Katja
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Künecke, Ulrike Dr.-Ing.
Institute Materials for Electronics and Energy Technology (i-MEET)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

Hens, P., Künecke, U., Konias, K., Hock, R., & Wellmann, P. (2009). Germanium Incorporation during PVT Bulk Growth of Silicon Carbide. Materials Science Forum, 615-617, 11-14.

Hens, Philip, et al. "Germanium Incorporation during PVT Bulk Growth of Silicon Carbide." Materials Science Forum 615-617 (2009): 11-14.


Last updated on 2018-13-08 at 13:53