Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions

Journal article
(Original article)


Publication Details

Author(s): Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, Winnacker A, Blanquet E, Dedulle J, Pons M
Journal: Materials Science Forum
Publication year: 2005
Volume: 483
Conference Proceedings Title: Materials Science Forum (Volumes 483-485)
Pages range: 25-30
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the M-PVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9-10(19)cm(-3) and p< 0.2&UOmega; cm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8(.)10(17)cm(-3).


FAU Authors / FAU Editors

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät


External institutions with authors

Institut National Polytechnique de Grenoble - Grenoble Institute of Technology


How to cite

APA:
Wellmann, P., Straubinger, T., Desperrier, P., Müller, R., Künecke, U., Sakwe, A.,... Pons, M. (2005). Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions. Materials Science Forum, 483, 25-30. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.25

MLA:
Wellmann, Peter, et al. "Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions." Materials Science Forum 483 (2005): 25-30.

BibTeX: 

Last updated on 2018-20-09 at 13:55