Analysis of silicon incorporation into VGF-grown GaAs

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Birkmann B, Weingärtner R, Wellmann P, Wiedemann B, Müller G
Zeitschrift: Journal of Crystal Growth
Verlag: Elsevier
Jahr der Veröffentlichung: 2002
Band: 237
Seitenbereich: 345-349
ISSN: 0022-0248
Sprache: Englisch


Abstract


The incorporation of silicon into VGF-grown GaAs is examined by Hall effect measurements, spark source mass spectrometry and photoluminescence (PL). It is found that the silicon is incorporated into the crystal according to Scheils-law with the Si concentration [Si] rising from 1.5 x 10(18) to 1 x 10(19) cm(-3). It is found that the intensity of the PL peak with energy close to the band gap decreases with increasing Si content of the material, whereas the intensity of the PL peak related to the acceptor SiGaVGa shows opposite behaviour. A compensation model which takes into account the acceptors Si-As and SiGaVGa is developed. The model describes the relationship between [Si] and the charge carrier concentration n up to silicon concentrations of 1 x 10(19) cm(-3) in GaAs grown under low thermal gradients. (C) 2002 Elsevier Science B.V. All rights reserved.



FAU-Autoren / FAU-Herausgeber

Müller, Georg Prof. Dr.
Technische Fakultät
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Autor(en) der externen Einrichtung(en)
Goethe-Universität Frankfurt am Main


Zitierweisen

APA:
Birkmann, B., Weingärtner, R., Wellmann, P., Wiedemann, B., & Müller, G. (2002). Analysis of silicon incorporation into VGF-grown GaAs. Journal of Crystal Growth, 237, 345-349. https://dx.doi.org/10.1016/S0022-0248(01)01935-2

MLA:
Birkmann, Bernhard, et al. "Analysis of silicon incorporation into VGF-grown GaAs." Journal of Crystal Growth 237 (2002): 345-349.

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Zuletzt aktualisiert 2018-07-08 um 21:42