Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals

Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P (2005)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2005

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 483

Pages Range: 445-448

Conference Proceedings Title: Materials Science Forum (Volumes 483-485)

DOI: 10.4028/www.scientific.net/MSF.483-485.445

Abstract

Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 (.) 10(14) cm(-3) to 1.04 (.) 10(15) cm(-3), while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.

Authors with CRIS profile

Albrecht Winnacker Technische Fakultät Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics DE Germany (DE)

How to cite

APA:

Schmitt, H., Müller, R., Maier, M., Winnacker, A., & Wellmann, P. (2005). Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals. Materials Science Forum, 483, 445-448. https://doi.org/10.4028/www.scientific.net/MSF.483-485.445

MLA:

Schmitt, Holger, et al. "Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals." Materials Science Forum 483 (2005): 445-448.

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