High Al-doping of SiC using a modified PVT (M-PVT) growth set-up

Journal article
(Original article)


Publication Details

Author(s): Müller R, Künecke U, Weingärtner R, Schmitt H, Desperrier P, Wellmann P
Editor(s): Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publishing place: Switzerland
Publication year: 2005
Volume: 483
Conference Proceedings Title: Materials Science Forum (Volumes 483-485)
Pages range: 31-34
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


Several highly aluminum doped SiC bulk crystals were grown with a modified PVT (M-PVT) method. To facilitate 4H-SiC formation, growth was conducted on the C-face. The samples were investigated using Hall measurements in the Van-der-Pauw geometry. Lowest room temperature values for specific resistivities were 0.09 &UOmega; cm for 6H-SiC and 0.2 &UOmega; cm for 4H-SiC, which are to our knowledge the lowest values yet reported in literature. Thus, resistivity values of < 0.2 &UOmega; cm, which are required for substrates in high power device applications, could be demonstrated for 4H-SiC. Remarkably, in very highly doped samples the type of conduction could not be determined by Hall measurements.


FAU Authors / FAU Editors

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Müller, R., Künecke, U., Weingärtner, R., Schmitt, H., Desperrier, P., & Wellmann, P. (2005). High Al-doping of SiC using a modified PVT (M-PVT) growth set-up. Materials Science Forum, 483, 31-34. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.31

MLA:
Müller, Ralf, et al. "High Al-doping of SiC using a modified PVT (M-PVT) growth set-up." Materials Science Forum 483 (2005): 31-34.

BibTeX: 

Last updated on 2018-14-08 at 13:53