High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
Müller R, Künecke U, Weingärtner R, Schmitt H, Desperrier P, Wellmann P (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2005
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 483
Pages Range: 31-34
Conference Proceedings Title: Materials Science Forum (Volumes 483-485)
Event location: Bologna
DOI: 10.4028/www.scientific.net/MSF.483-485.31
Abstract
Several highly aluminum doped SiC bulk crystals were grown with a modified PVT (M-PVT) method. To facilitate 4H-SiC formation, growth was conducted on the C-face. The samples were investigated using Hall measurements in the Van-der-Pauw geometry. Lowest room temperature values for specific resistivities were 0.09 &UOmega; cm for 6H-SiC and 0.2 &UOmega; cm for 4H-SiC, which are to our knowledge the lowest values yet reported in literature. Thus, resistivity values of < 0.2 &UOmega; cm, which are required for substrates in high power device applications, could be demonstrated for 4H-SiC. Remarkably, in very highly doped samples the type of conduction could not be determined by Hall measurements.
Authors with CRIS profile
Ulrike Künecke
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
How to cite
APA:
Müller, R., Künecke, U., Weingärtner, R., Schmitt, H., Desperrier, P., & Wellmann, P. (2005). High Al-doping of SiC using a modified PVT (M-PVT) growth set-up. Materials Science Forum, 483, 31-34. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.31
MLA:
Müller, Ralf, et al. "High Al-doping of SiC using a modified PVT (M-PVT) growth set-up." Materials Science Forum 483 (2005): 31-34.
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