Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]

Journal article
(Erratum)


Publication Details

Author(s): Sakwe A, Müller R, Wellmann P
Journal: Journal of Crystal Growth
Publisher: Elsevier
Publication year: 2007
Volume: 299
Journal issue: 1
Pages range: 234-234
ISSN: 0022-0248
Language: English


FAU Authors / FAU Editors

Müller, Robin
Lehrstuhl für Werkstoffwissenschaften (Allgemeine Werkstoffeigenschaften)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Sakwe, A., Müller, R., & Wellmann, P. (2007). Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]. Journal of Crystal Growth, 299(1), 234-234. https://dx.doi.org/10.1016/j.jcrysgro.2006.10.196

MLA:
Sakwe, Aloysius, Robin Müller, and Peter Wellmann. "Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]." Journal of Crystal Growth 299.1 (2007): 234-234.

BibTeX: 

Last updated on 2018-14-08 at 13:38