In-situ X-ray measurements of defect generation during PVT growth of SiC

Konias K, Hock R, Stockmeier M, Wellmann P, Miller M, Ossege S, Magerl A (2007)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2007

Journal

Book Volume: 556-557

Pages Range: 267-270

Conference Proceedings Title: Materials Science Forum 556-557

DOI: 10.4028/www.scientific.net/MSF.556-557.267

Abstract

A standard inductively heated PVT growth furnace modified for diffraction experiments with high energy x-rays in focussing Laue geometry was built. The growth furnace will be placed in front of a tungsten anode high energy x-ray source. The Laue diffraction pattern of the growing crystal can be detected on a CCD camera detector. Evolution of crystalline defects as a function of the growth process parameters will be infered from the diffraction experiments. The furnace design and results of first test measurements serving as proof of concept are reported.

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How to cite

APA:

Konias, K., Hock, R., Stockmeier, M., Wellmann, P., Miller, M., Ossege, S., & Magerl, A. (2007). In-situ X-ray measurements of defect generation during PVT growth of SiC. Materials Science Forum, 556-557, 267-270. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.267

MLA:

Konias, Katja, et al. "In-situ X-ray measurements of defect generation during PVT growth of SiC." Materials Science Forum 556-557 (2007): 267-270.

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