Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy

Journal article
(Original article)


Publication Details

Author(s): Hens P, Mueller J, Fahlbusch L, Spiecker E, Wellmann P, Spiecker E
Editor(s): Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Journal: Materials Science Forum
Publication year: 2011
Volume: 679-680
Conference Proceedings Title: Materials Science Forum (Volumes 679-680)
Pages range: 127-130
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface structures can be found in micrographs published in the literature but have not been addressed so far. We propose a mechanism which explains the formation of these "type II voids" as result of hot-hydrogen etching. Type II voids seem to act as nucleation sites for the well-known faceted voids formed beneath the 3C-SiC layer during seeding (type I voids). Suppression of type II voids by appropriate high temperature cleaning steps therefore reduces the overall density of detrimental type I voids.


FAU Authors / FAU Editors

Fahlbusch, Lars
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Hens, Philip
Graduiertenzentrum der FAU
Spiecker, Erdmann Prof. Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


Research Fields

A2 Nanoanalysis and Microscopy
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Hens, P., Mueller, J., Fahlbusch, L., Spiecker, E., Wellmann, P., & Spiecker, E. (2011). Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy. Materials Science Forum, 679-680, 127-130. https://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.127

MLA:
Hens, Philip, et al. "Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy." Materials Science Forum 679-680 (2011): 127-130.

BibTeX: 

Last updated on 2019-29-05 at 08:46