Effects of source material on epitaxial growth of fluorescent SiC

Journal article

Publication Details

Author(s): Jokubavicius V, Hens P, Liljedahl R, Sun JW, Kaiser M, Wellmann P, Sano S, Yakimova R, Kamiyama S, Syväjärvi M
Journal: Thin Solid Films
Publisher: Elsevier
Publication year: 2012
Volume: 522
Pages range: 7-10
ISSN: 0040-6090
Language: English


The growth of fluorescent SiC using Fast Sublimation Growth Process was demonstrated using different types of SiC source materials. These were prepared by (i) high-temperature hot pressing, (ii) chemical vapor deposition and (iii) physical vapor transport. The optimized growth rates of 50 mu m/h, 170 mu m/h and 200 mu m/h were achieved using the three types of sources, respectively. The best results in respect to growth rates are obtained using higher density sources. Fluorescent SiC layers with mirror-like morphology, very good crystal quality and yellowish or warm white light photoluminescence at room temperature were grown using all three types of the source materials. (C) 2011 Elsevier B. V. All rights reserved.

FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Kaiser, Michl
Institute Materials for Electronics and Energy Technology (i-MEET)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

External institutions with authors

Linköping University
Meijo University / 名城大学

How to cite

Jokubavicius, V., Hens, P., Liljedahl, R., Sun, J.W., Kaiser, M., Wellmann, P.,... Syväjärvi, M. (2012). Effects of source material on epitaxial growth of fluorescent SiC. Thin Solid Films, 522, 7-10. https://dx.doi.org/10.1016/j.tsf.2011.10.176

Jokubavicius, V., et al. "Effects of source material on epitaxial growth of fluorescent SiC." Thin Solid Films 522 (2012): 7-10.


Last updated on 2018-07-08 at 21:41