Effects of source material on epitaxial growth of fluorescent SiC

Jokubavicius V, Hens P, Liljedahl R, Sun JW, Kaiser M, Wellmann P, Sano S, Yakimova R, Kamiyama S, Syväjärvi M (2012)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2012

Journal

Thin Solid Films Elsevier

Publisher: Elsevier

Book Volume: 522

Pages Range: 7-10

DOI: 10.1016/j.tsf.2011.10.176

Abstract

The growth of fluorescent SiC using Fast Sublimation Growth Process was demonstrated using different types of SiC source materials. These were prepared by (i) high-temperature hot pressing, (ii) chemical vapor deposition and (iii) physical vapor transport. The optimized growth rates of 50 mu m/h, 170 mu m/h and 200 mu m/h were achieved using the three types of sources, respectively. The best results in respect to growth rates are obtained using higher density sources. Fluorescent SiC layers with mirror-like morphology, very good crystal quality and yellowish or warm white light photoluminescence at room temperature were grown using all three types of the source materials. (C) 2011 Elsevier B. V. All rights reserved.

Authors with CRIS profile

Philip Hens Graduiertenzentrum der FAU Michl Kaiser Institute Materials for Electronics and Energy Technology (i-MEET) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Meijo University / 名城大学 JP Japan (JP) Linköping University SE Sweden (SE) ADMAP Inc. JP Japan (JP)

How to cite

APA:

Jokubavicius, V., Hens, P., Liljedahl, R., Sun, J.W., Kaiser, M., Wellmann, P.,... Syväjärvi, M. (2012). Effects of source material on epitaxial growth of fluorescent SiC. Thin Solid Films, 522, 7-10. https://dx.doi.org/10.1016/j.tsf.2011.10.176

MLA:

Jokubavicius, V., et al. "Effects of source material on epitaxial growth of fluorescent SiC." Thin Solid Films 522 (2012): 7-10.

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