Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

Journal article
(Original article)


Publication Details

Author(s): Schimmel S, Kaiser M, Hens P, Jokubavicius V, Liljedahl R, Sun J, Yakimova R, Ou Y, Ou H, Linnarsson MK, Wellmann P, Syväjärvi M
Editor(s): Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publishing place: Switzerland
Publication year: 2013
Volume: 740-742
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
Pages range: 185-188
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.


FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Kaiser, Michl
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Schimmel, Saskia
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

KTH Royal Institute of Technology
Linköping University
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)


How to cite

APA:
Schimmel, S., Kaiser, M., Hens, P., Jokubavicius, V., Liljedahl, R., Sun, J.,... Syväjärvi, M. (2013). Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates. Materials Science Forum, 740-742, 185-188. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.185

MLA:
Schimmel, Saskia, et al. "Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates." Materials Science Forum 740-742 (2013): 185-188.

BibTeX: 

Last updated on 2018-08-08 at 10:53