Lateral boron distribution in polycrystalline SiC source materials

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Linnarsson MK, Kaiser M, Liljedahl R, Jokubavicius V, Ou Y, Wellmann P, Ou H, Syväjärvi M
Zeitschrift: Materials Science Forum
Jahr der Veröffentlichung: 2013
Band: 740-742
Tagungsband: Materials Science Forum (Volumes 740-742)
Seitenbereich: 397-400
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


Abstract


Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x10(18) cm(-3) and 1x10(19) cm(-3), respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Kaiser, Michl
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Einrichtungen weiterer Autorinnen und Autoren

KTH Royal Institute of Technology
Linköping University
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)


Zitierweisen

APA:
Linnarsson, M.K., Kaiser, M., Liljedahl, R., Jokubavicius, V., Ou, Y., Wellmann, P.,... Syväjärvi, M. (2013). Lateral boron distribution in polycrystalline SiC source materials. Materials Science Forum, 740-742, 397-400. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.397

MLA:
Linnarsson, Margareta K., et al. "Lateral boron distribution in polycrystalline SiC source materials." Materials Science Forum 740-742 (2013): 397-400.

BibTeX: 

Zuletzt aktualisiert 2018-08-08 um 10:38