Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors

Journal article


Publication Details

Author(s): Weis S, Jank M, Ryssel H, Peukert W, Frey L
Journal: Small
Publisher: Wiley-VCH Verlag
Publication year: 2011
Volume: 7
Journal issue: 20
Pages range: 2853-2857
ISSN: 1613-6829
eISSN: 1613-6810


Abstract


Room-temperature, solution-processed, silicon nanoparticle thin films show significant gating with distinct hysteresis in their current–voltage characteristics. Device performance strongly depends on measurement environment and charge transport is determined by particle surfaces. Particle encapsulation with polymethyl methacrylate or Al2O3 reduces hysteresis and device sensitivity against environmental influences. Both Al2O3 coating and UV exposure during measurements alter current transport and enhance conductivity, providing evidence for surface-dominated transport.



FAU Authors / FAU Editors

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Jank, Michael Dr.
Lehrstuhl für Elektronische Bauelemente
Peukert, Wolfgang Prof. Dr.-Ing.
Lehrstuhl für Feststoff- und Grenzflächenverfahrenstechnik
Weis, Sebastian
Lehrstuhl für Elektronische Bauelemente


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


Research Fields

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials
A1 Functional Particle Systems
Exzellenz-Cluster Engineering of Advanced Materials

Last updated on 2019-06-08 at 09:07