Reducing charge trapping in PbS colloidal quantum dot solids

Balazs DM, Nugraha MI, Bisri SZ, Sytnyk M, Heiß W, Loi MA (2014)

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 104

Article Number: 112104

Journal Issue: 11

DOI: 10.1063/1.4869216

Abstract

Understanding and improving charge transport in colloidal quantum dot solids is crucial for the development of efficient solar cells based on these materials. In this paper, we report high performance field-effect transistors based on lead-sulfide colloidal quantum dots (PbS CQDs) crosslinked with 3-mercaptopropionic acid (MPA). Electron mobility up to 0.03 cm(2)/Vs and on/off ratio above 10(5) was measured; the later value is the highest in the literature for CQD Field effect transistors with silicon-oxide gating. This was achieved by using high quality material and preventing trap generation during fabrication and measurement. We show that air exposure has a reversible p-type doping effect on the devices, and that intrinsically MPA is an n-type dopant for PbS CQDs. (C) 2014 AIP Publishing LLC.

Authors with CRIS profile

Wolfgang Heiß Professur für Werkstoffwissenschaften (lösungsprozessierte Halbleitermaterialien)

Involved external institutions

University of Groningen / Rijksuniversiteit Groningen

Netherlands (NL) Johannes Kepler Universität (JKU) Linz

Austria (AT)

How to cite

APA:

Balazs, D.M., Nugraha, M.I., Bisri, S.Z., Sytnyk, M., Heiß, W., & Loi, M.A. (2014). Reducing charge trapping in PbS colloidal quantum dot solids. Applied Physics Letters, 104(11). https://dx.doi.org/10.1063/1.4869216

MLA:

Balazs, D. M., et al. "Reducing charge trapping in PbS colloidal quantum dot solids." Applied Physics Letters 104.11 (2014).

BibTeX: Download