Monolithic circuits with epitaxial graphene/silicon carbide transistors

Journal article


Publication Details

Author(s): Hertel S, Krieger M, Weber HB
Journal: Physica Status Solidi
Publisher: Akademie Verlag
Publication year: 2014
Volume: 8
Journal issue: 8
Pages range: 688-691
ISSN: 0031-8957


Abstract


A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.



FAU Authors / FAU Editors

Hertel, Stefan
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Hertel, S., Krieger, M., & Weber, H.B. (2014). Monolithic circuits with epitaxial graphene/silicon carbide transistors. Physica Status Solidi, 8(8), 688-691. https://dx.doi.org/10.1002/pssr.201409171

MLA:
Hertel, Stefan, Michael Krieger, and Heiko B. Weber. "Monolithic circuits with epitaxial graphene/silicon carbide transistors." Physica Status Solidi 8.8 (2014): 688-691.

BibTeX: 

Last updated on 2018-19-04 at 02:47