A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

Journal article
(Letter)


Publication Details

Author(s): Krach F, Hertel S, Waldmann D, Jobst J, Krieger M, Reshanov S, Schoner A, Weber HB
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 2012
Volume: 100
Pages range: 122102
ISSN: 0003-6951


Abstract


Due to the lack of graphene transistors with large on/off ratio, we propose a concept employing both epitaxial graphene and its underlying substrate silicon carbide (SiC) as electronic materials. We demonstrate a simple, robust, and scalable transistor, in which graphene serves as electrodes and SiC as a semiconducting channel. The common interface has to be chosen such that it provides favorable charge injection. The insulator and gate functionality is realized by an ionic liquid gate for convenience but could be taken over by a solid gate stack. On/off ratios exceeding 44000 at room temperature are found. © 2012 American Institute of Physics.



FAU Authors / FAU Editors

Hertel, Stefan
Lehrstuhl für Angewandte Physik
Jobst, Johannes
Lehrstuhl für Angewandte Physik
Krach, Florian
Lehrstuhl für Elektronische Bauelemente
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Waldmann, Daniel
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Krach, F., Hertel, S., Waldmann, D., Jobst, J., Krieger, M., Reshanov, S.,... Weber, H.B. (2012). A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel. Applied Physics Letters, 100, 122102. https://dx.doi.org/10.1063/1.3695157

MLA:
Krach, Florian, et al. "A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel." Applied Physics Letters 100 (2012): 122102.

BibTeX: 

Last updated on 2018-19-04 at 02:47