Comparison of silicon and 4H silicon carbide patterning using focused ion beams

Journal article


Publication Details

Author(s): Kaliya Perumal Veerapandian S, Beuer S, Rumler M, Stumpf F, Thomas K, Pillatsch L, Michler J, Frey L, Rommel M
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Publisher: Elsevier
Publication year: 2015
Volume: 365
Journal issue: 365
Pages range: 44-49
ISSN: 0168-583X


Abstract


In this work, focused ion beam (FIB) milling of different structures is studied and compared for two different electronic materials, i.e., silicon (Si) and silicon carbide (SiC). Results show that the same processing parameters yield different trench cross sections for Si and SiC, even when the different material removal rates (MRR) are taken into account. In order to investigate more complex structures, nanocone arrays were fabricated in Si and SiC. The difference in the shape of the trench cross section and complex structures can be mainly explained by the significant difference in the angle dependent MRR for both materials. Other effects which occur during FIB irradiation by the non-ideal beam shape such as swelling and damage outside of the purposely processed region are emulated and sensitively studied by scanning probe microscopy techniques such as atomic force microscopy (in-line and off-line) and scanning spreading resistance microscopy, respectively, for SiC and the results are compared with those for Si.



FAU Authors / FAU Editors

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Kaliya Perumal Veerapandian, Savita
Lehrstuhl für Elektronische Bauelemente
Rumler, Maximilian
Lehrstuhl für Elektronische Bauelemente


External institutions with authors

Eidgenössische Materialprüfungs- und Forschungsanstalt (Empa) / Swiss Federal Laboratories for Materials Science & Technology
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


How to cite

APA:
Kaliya Perumal Veerapandian, S., Beuer, S., Rumler, M., Stumpf, F., Thomas, K., Pillatsch, L.,... Rommel, M. (2015). Comparison of silicon and 4H silicon carbide patterning using focused ion beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365(365), 44-49. https://dx.doi.org/10.1016/j.nimb.2015.07.079

MLA:
Kaliya Perumal Veerapandian, Savita, et al. "Comparison of silicon and 4H silicon carbide patterning using focused ion beams." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365.365 (2015): 44-49.

BibTeX: 

Last updated on 2018-07-08 at 11:53