Comparison of silicon and 4H silicon carbide patterning using focused ion beams

Kaliya Perumal Veerapandian S, Beuer S, Rumler M, Stumpf F, Thomas K, Pillatsch L, Michler J, Frey L, Rommel M (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Publisher: Elsevier

Book Volume: 365

Pages Range: 44-49

Journal Issue: 365

DOI: 10.1016/j.nimb.2015.07.079

Abstract

In this work, focused ion beam (FIB) milling of different structures is studied and compared for two different electronic materials, i.e., silicon (Si) and silicon carbide (SiC). Results show that the same processing parameters yield different trench cross sections for Si and SiC, even when the different material removal rates (MRR) are taken into account. In order to investigate more complex structures, nanocone arrays were fabricated in Si and SiC. The difference in the shape of the trench cross section and complex structures can be mainly explained by the significant difference in the angle dependent MRR for both materials. Other effects which occur during FIB irradiation by the non-ideal beam shape such as swelling and damage outside of the purposely processed region are emulated and sensitively studied by scanning probe microscopy techniques such as atomic force microscopy (in-line and off-line) and scanning spreading resistance microscopy, respectively, for SiC and the results are compared with those for Si.

Authors with CRIS profile

Savita Kaliya Perumal Veerapandian Lehrstuhl für Elektronische Bauelemente Maximilian Rumler Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente

Related research project(s)

A Synergetic Training Network on Energy beam Processing: from Modelling to Industrial Applications (STEEP) A Synergetic Training Network on Energy beam Processing: from Modelling to Industrial Applications Jan. 15, 2013 - Jan. 14, 2017

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Eidgenössische Materialprüfungs- und Forschungsanstalt (Empa) / Swiss Federal Laboratories for Materials Science & Technology CH Switzerland (CH)

How to cite

APA:

Kaliya Perumal Veerapandian, S., Beuer, S., Rumler, M., Stumpf, F., Thomas, K., Pillatsch, L.,... Rommel, M. (2015). Comparison of silicon and 4H silicon carbide patterning using focused ion beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365(365), 44-49. https://dx.doi.org/10.1016/j.nimb.2015.07.079

MLA:

Kaliya Perumal Veerapandian, Savita, et al. "Comparison of silicon and 4H silicon carbide patterning using focused ion beams." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365.365 (2015): 44-49.

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