Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?

Journal article

Publication Details

Author(s): Zippelius B, Glas A, Weber HB, Pensl G, Kimoto T, Krieger M
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2012
Volume: 717-720
Pages range: 251-254
ISSN: 0255-5476
eISSN: 1662-9752


Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH6- and EH7-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH6 (E-C - E-T(EH6) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH6 is likely to be acceptor-like according to the missing Poole-Frenkel effect. In this case, it can be excluded that the EH6-center and the prominent acceptor-like Z(1/2)-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH6 is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH7 (E-C - E-r(EH7) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH6/7 double peak taking the previously determined parameters of EH6 into account.

FAU Authors / FAU Editors

Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik

How to cite

Zippelius, B., Glas, A., Weber, H.B., Pensl, G., Kimoto, T., & Krieger, M. (2012). Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects? Materials Science Forum, 717-720, 251-254. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.251

Zippelius, Bernd, et al. "Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?" Materials Science Forum 717-720 (2012): 251-254.


Last updated on 2018-19-04 at 03:16