Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

Journal article
(Letter)


Publication Details

Author(s): Preu S, Mittendorff M, Winnerl S, Lu H, Gossard A, Weber HB
Journal: Optics Express
Publisher: Optical Society of America
Publication year: 2013
Volume: 21
Journal issue: 15
Pages range: 17941-17950
ISSN: 1094-4087


Abstract


A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector is as large as 65 +/- 3 dB/root Hz, enabling applications in a large variety of experiments and setups, also including table-top systems. (C) 2013 Optical Society of America



FAU Authors / FAU Editors

Preu, Sascha Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Preu, S., Mittendorff, M., Winnerl, S., Lu, H., Gossard, A., & Weber, H.B. (2013). Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals. Optics Express, 21(15), 17941-17950. https://dx.doi.org/10.1364/OE.21.017941

MLA:
Preu, Sascha, et al. "Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals." Optics Express 21.15 (2013): 17941-17950.

BibTeX: 

Last updated on 2018-19-04 at 03:16