The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Schimmel S, Kaiser M, Jokubavicius V, Ou Y, Hens P, Linnarsson MK, Sun J, Liljedahl R, Ou H, Syväjärvi M, Wellmann P
Zeitschrift: IOP Conference Series: Materials Science and Engineering
Verlag: Institute of Physics: Open Access Journals / IOP Publishing
Jahr der Veröffentlichung: 2014
Band: 56
ISSN: 1757-8981
eISSN: 1757-899X


Abstract


Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Hens, Philip
Graduiertenzentrum der FAU
Kaiser, Michl
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Schimmel, Saskia
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Einrichtungen weiterer Autorinnen und Autoren

KTH Royal Institute of Technology
Linköping University
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)


Zitierweisen

APA:
Schimmel, S., Kaiser, M., Jokubavicius, V., Ou, Y., Hens, P., Linnarsson, M.K.,... Wellmann, P. (2014). The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. IOP Conference Series: Materials Science and Engineering, 56. https://dx.doi.org/10.1088/1757-899X/56/1/012002

MLA:
Schimmel, Saskia, et al. "The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy." IOP Conference Series: Materials Science and Engineering 56 (2014).

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