The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Journal article


Publication Details

Author(s): Schimmel S, Kaiser M, Jokubavicius V, Ou Y, Hens P, Linnarsson MK, Sun J, Liljedahl R, Ou H, Syväjärvi M, Wellmann P
Journal: IOP Conference Series: Materials Science and Engineering
Publisher: Institute of Physics: Open Access Journals / IOP Publishing
Publication year: 2014
Volume: 56
ISSN: 1757-8981
eISSN: 1757-899X


Abstract


Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.



FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Kaiser, Michl
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Schimmel, Saskia
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

KTH Royal Institute of Technology
Linköping University
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)


How to cite

APA:
Schimmel, S., Kaiser, M., Jokubavicius, V., Ou, Y., Hens, P., Linnarsson, M.K.,... Wellmann, P. (2014). The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. IOP Conference Series: Materials Science and Engineering, 56. https://dx.doi.org/10.1088/1757-899X/56/1/012002

MLA:
Schimmel, Saskia, et al. "The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy." IOP Conference Series: Materials Science and Engineering 56 (2014).

BibTeX: 

Last updated on 2019-30-07 at 09:38