Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy

Journal article
(Original article)


Publication Details

Author(s): Stroth C, Sayed MH, Schuster M, Ohland J, Hammer-Riedel I, Hammer MS, Wellmann P, Parisi J, Gütay L
Journal: Journal of Materials Science: Materials in Electronics
Publisher: Institute of Electrical and Electronics Engineers Inc.
Publication year: 2016
Volume: 1-9
Pages range: 506-511
ISBN: 9781509027248
ISSN: 1573-482X
Language: English


Abstract


We present a study on the temperature and film depth dependent phase formation in Cu-Zn-Sn-Se thin films. Zn/Sn/Cu precursors were selenized at different temperatures, followed by depth-resolved Raman profiling. A high depth resolution for Raman analysis was achieved by a special sample preparation step using a focused ion beam to prepare shallow angle cross sections (SACS) of the absorber. Multi-phase structures were observed at low selenization temperatures with a first formation of the quaternary CuZnSnSe at only 250 °C and the existence of SnO in films annealed at 330 °C. At high selenization temperatures up to 560 °C CuZnSnSe was the main phase with some traces of ZnSe and a MoSe interface layer at the back contact. Furthermore, compositional gradients were investigated by scanning electron microscopy and energy dispersive X-ray spectroscopy measurements on sample cross sections. The combination of these results allows for observation of both elemental composition and phase composition of the films and their dynamics during the annealing procedure.


FAU Authors / FAU Editors

Schuster, Matthias
Institute Materials for Electronics and Energy Technology (i-MEET)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions
Carl von Ossietzky Universität Oldenburg


How to cite

APA:
Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S.,... Gütay, L. (2016). Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy. Journal of Materials Science: Materials in Electronics, 1-9, 506-511. https://dx.doi.org/10.1109/PVSC.2016.7749646

MLA:
Stroth, Christiane, et al. "Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy." Journal of Materials Science: Materials in Electronics 1-9 (2016): 506-511.

BibTeX: 

Last updated on 2018-20-11 at 13:50