Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)

Journal article


Publication Details

Author(s): Fromm F, Oliveira MH, Molina-Sanchez A, Hundhausen M, Lopes JMJ, Riechert H, Wirtz L, Seyller T
Journal: New Journal of Physics
Publisher: Institute of Physics: Open Access Journals / Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft
Publication year: 2013
Volume: n/a
Pages range: n/a
ISSN: 1367-2630


Abstract

We report a Raman study of the so-called buffer layer with (6√3 6√3)R30° periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.


FAU Authors / FAU Editors

Fromm, Felix
Lehrstuhl für Laserphysik
Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik


External institutions with authors

Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.
Technische Universität Chemnitz
University of Luxembourg


How to cite

APA:
Fromm, F., Oliveira, M.H., Molina-Sanchez, A., Hundhausen, M., Lopes, J.M.J., Riechert, H.,... Seyller, T. (2013). Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001). New Journal of Physics, n/a, n/a. https://dx.doi.org/10.1088/1367-2630/15/4/043031

MLA:
Fromm, Felix, et al. "Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)." New Journal of Physics n/a (2013): n/a.

BibTeX: 

Last updated on 2018-09-08 at 16:38