Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)

Fromm F, Oliveira MH, Molina-Sanchez A, Hundhausen M, Lopes JMJ, Riechert H, Wirtz L, Seyller T (2013)


Publication Type: Journal article

Publication year: 2013

Journal

Publisher: Institute of Physics: Open Access Journals / Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft

Book Volume: n/a

Pages Range: n/a

DOI: 10.1088/1367-2630/15/4/043031

Abstract

We report a Raman study of the so-called buffer layer with (6√3 6√3)R30° periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.

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APA:

Fromm, F., Oliveira, M.H., Molina-Sanchez, A., Hundhausen, M., Lopes, J.M.J., Riechert, H.,... Seyller, T. (2013). Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001). New Journal of Physics, n/a, n/a. https://doi.org/10.1088/1367-2630/15/4/043031

MLA:

Fromm, Felix, et al. "Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)." New Journal of Physics n/a (2013): n/a.

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