The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth

Journal article
(Original article)


Publication Details

Author(s): Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Goesele U, Bachmann J, Nielsch K
Journal: Journal of the American Chemical Society
Publisher: American Chemical Society
Publication year: 2010
Volume: 132
Pages range: 7592-+
ISSN: 0002-7863


Abstract


Conformal atomic layer deposition of thin Sb(2)S(3) layers takes place epitaxially on suitable substrates at 90 degrees C. More elevated deposition temperatures increase the mobility of the solid and result in the diffusion of Sb(2)S(3) along surface energy gradients. On an Sb(2)Se(3) wire that presents the high-energy c facet at its extremity, this results in the axial elongation of the wire with a Sb(2)S(3) segment. When an Sb(2)S(3) wire whose c planes are exposed on the sides is used as the substrate, the homoepitaxy collects material laterally and yields a nano-object with a rectangular cross section.



FAU Authors / FAU Editors

Bachmann, Julien Prof.
Lehrstuhl für Chemistry of thin film materials


External institutions with authors

Chinese Academy of Sciences (CAS) / 中国科学院
Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics
Universität Hamburg


How to cite

APA:
Yang, R.B., Zakharov, N., Moutanabbir, O., Scheerschmidt, K., Wu, L.-M., Goesele, U.,... Nielsch, K. (2010). The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth. Journal of the American Chemical Society, 132, 7592-+. https://dx.doi.org/10.1021/ja102590v

MLA:
Yang, Ren Bin, et al. "The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth." Journal of the American Chemical Society 132 (2010): 7592-+.

BibTeX: 

Last updated on 2018-11-08 at 03:02